vapor phase epitaxial growth 汽相外延生长
liquid phase epitaxial growth 液相外延生长 ; 液相取向附生
low pressure epitaxial growth 低压外延生长
pre epitaxial growth 外延前生长
Epitaxial Growth Process 外延生长过程 ; 外延生长进程
phase epitaxial growth technique 液相外延生长技术
epitaxial growth system 磊晶生长系统
vapor phase epitaxial growth system 汽相磊晶生长系统
solid phase epitaxial growth system 固相磊晶生长系统
molecular beam epitaxial growth system 分子束磊晶生长系统
The optimal melting temperature and time of the melt-epitaxial growth technics were clarified.
确定了熔融外延生长工艺的最佳熔融温度和熔融时间。
参考来源 - 无氟MOD法制备GdBCO高温超导薄膜研究At the present time, sapphire and SiC are the most prevailing substrate materials forⅢ-Ⅴsemiconductors (GaN, GaAS, etc. ) epitaxial growth.
蓝宝石和碳化硅等材料是当今主流的用于Ⅲ-Ⅴ价半导体(氮化镓、砷化镓等)外延生长的基体材料。
参考来源 - 高亮度LED晶圆紫外激光划片技术研究·2,447,543篇论文数据,部分数据来源于NoteExpress
BST thin films sol gel technique epitaxial growth electrical properties.
标签薄膜溶胶-凝胶工艺外延生长电性能。
Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.
从外延形貌照片中观察到了外延生长台及生长螺线。
A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.
本文提出了低-常压两步外延生长技术。
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